Buffer design for nitrogen polarity GaN on sapphire by RF-MBE and application to the nanostructure formation using KOH etching
- 1 May 2006
- journal article
- Published by Elsevier in Physica E: Low-dimensional Systems and Nanostructures
- Vol. 32 (1-2), 245-248
- https://doi.org/10.1016/j.physe.2005.12.047
Abstract
No abstract availableFunding Information
- Ministry of Education, Culture, Sports, Science and Technology
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