Suppression of corner effects in triple-gate MOSFETs
- 1 December 2003
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 24 (12), 745-747
- https://doi.org/10.1109/led.2003.820624
Abstract
The abnormal corner effects on channel current in nanoscale triple-gate MOSFETs are examined via two-dimensional (2-D) numerical simulations and quasi-2-D analysis. Heavy body doping [for threshold voltage (V/sub t/) control with a polysilicon gate] is found to underlie the effects, which can hence be suppressed, irrespective of the shape of the corners, by leaving the body undoped, and relying on a metal gate with proper work function for V/sub t/ control. Short-channel effects tend to ameliorate the corner effects, but the need for ad hoc suppression remains.Keywords
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