A complementary heterostructure field effect transistor technology based on InAs/AlSb/GaSb
- 1 January 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 37 (10), 2265-2267
- https://doi.org/10.1109/16.59918
Abstract
No abstract availableThis publication has 21 references indexed in Scilit:
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