Band Lineups at II-VI Heterojunctions: Failure of the Common-Anion Rule
- 23 June 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 56 (25), 2755-2758
- https://doi.org/10.1103/physrevlett.56.2755
Abstract
Band-edge discontinuities are calculated for tellurium-based II-VI heterojunctions. Contrary to the widely accepted common-anion rule, large valence-band discontinuities are found in most cases, including HgTe-CdTe. The common-anion rule is examined and predicted to fail, not only here, but for all lattice-matched II-VI and III-V heterojunctions. An experiment is proposed to test these predictions.Keywords
This publication has 20 references indexed in Scilit:
- Schottky barriers and semiconductor band structuresPhysical Review B, 1985
- Recent models of Schottky barrier formationJournal of Vacuum Science & Technology B, 1985
- A critical review of heterojunction band offsetsJournal of Vacuum Science & Technology B, 1985
- Theory of semiconductor heterojunctions: The role of quantum dipolesPhysical Review B, 1984
- Schottky Barrier Heights and the Continuum of Gap StatesPhysical Review Letters, 1984
- Energy barriers and interface states at heterojunctionsJournal of Physics C: Solid State Physics, 1979
- Theory of the energy-band lineup at an abrupt semiconductor heterojunctionPhysical Review B, 1977
- Elementary theory of heterojunctionsJournal of Vacuum Science and Technology, 1977
- A simple approach to heterojunctionsJournal of Physics C: Solid State Physics, 1977
- Correlation for III-V and II-VI Semiconductors of the Au Schottky Barrier Energy with Anion ElectronegativityPhysical Review Letters, 1976