Effects of ion implantation on the annealing behaviour of amorphous germanium and gold bilayers
- 1 June 1989
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 173 (1), 77-82
- https://doi.org/10.1016/0040-6090(89)90539-7
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- APPEARENCE OF FRACTAL REGION IN ANNEALED a-Ge/Au BILAYER THIN FILMSActa Physica Sinica, 1988
- Crystallization of amorphous Ge in Ge/Au bilayer films and Ge-Au alloy filmsChinese Physics Letters, 1985
- Kinetics of non-equililbrium phases formation by ion beam mixing in Au-Ge bilayersNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- Interfacial reactions between Au and hydrogenated amorphous SiJournal of Vacuum Science and Technology, 1982
- Diffusion-Limited Aggregation, a Kinetic Critical PhenomenonPhysical Review Letters, 1981
- Room temperature Au–Ge interdiffusionPhysica Status Solidi (a), 1978
- Interdiffusion mechanisms in Ag-Au thin-film couplesApplied Physics Letters, 1976
- Metal contact induced crystallization in films of amorphous silicon and germaniumJournal of Non-Crystalline Solids, 1972