High-temperature lifetesting of Al/SiOx/p-Si contacts for MIS solar cells
- 15 June 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 34 (12), 860-861
- https://doi.org/10.1063/1.90701
Abstract
High‐temperature lifetesting of Al/SiOx (10–15 Å)/p‐Si contacts for high‐efficiency MIS solar cells is reported. Electrical degradation in the temperature range 270–400 °C was governed by an activation energy of 2.56±0.12 eV, indicating that the reduction of the thin oxide layer by Al was the mechanism responsible. Extrapolating to lower temperatures indicates that this process proceeds at a negligible rate below 200 °C.Keywords
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