Emitter current suppression in a high-low-junction emitter solar cell using an oxide-charge-induced electron accumulation layer

Abstract

A new type of high‐low‐junction emitter silicon solar cell employing an oxide‐charge‐induced electron accumulation layer demonstrates complete suppression of the dark emitter recombination current J_E to values so low that the base recombination current dominates in determining the open‐circuit voltage V_OC. This suppression of J_E results in measured values of V_OC considerably larger than those previously reported for n‐on‐p silicon solar cells. This ability to suppress J_E leads to projections of efficiency of about 18% AM0 and about 20% AM1 for this oxide‐charge‐induced high‐low‐junction emitter (OCI‐HLE) solar cell.