Interlayer coupling in ferromagnetic semiconductor superlattices
- 15 April 1999
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 59 (15), 9818-9821
- https://doi.org/10.1103/physrevb.59.9818
Abstract
We develop a mean-field theory of carrier-induced ferromagnetism in diluted magnetic semiconductors. Our approach represents an improvement over standard Ruderman-Kittel-Kesuya-Yosida model allowing spatial inhomogeneity of the system, free-carrier spin polarization, finite temperature, and free-carrier exchange and correlation to be accounted for self-consistently. As an example, we calculate the electronic structure of a As/GaAs superlattice with alternating ferromagnetic and paramagnetic layers and demonstrate the possibility of semiconductor magnetoresistance systems with designed properties.
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