Sputtering of Polycrystalline Copper and Silver by 30–170 keV Argon Ions
- 1 June 1964
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 35 (6), 1673-1680
- https://doi.org/10.1063/1.1713718
Abstract
Polycrystalline copper and silver have been sputtered by 30–170 keV singly ionized argon at various beam angles, and total yields (atoms/ion) have been measured as a function of energy and incident angle. Angular distributions of sputtered material about the target normal indicate a distribution approximately proportional to the cosine of the angle of emission, but with more material collected in the normal direction than for a strict cosine distribution. No significant variation of angular distribution with ion energy or with sputtering beam angle was observed. The yield appears to be independent of pressure, collector temperature, current, and current density. Erratic results were obtained when the target was not water cooled, and when the glass collector plates were not initially coated with a thin layer (∼50 Å) of evaporated metal.Keywords
This publication has 15 references indexed in Scilit:
- Collection and sputtering experiments with noble gas ionsNuclear Instruments and Methods, 1961
- Sputtering of copper single crystals bombarded with A+, Kr+ and Ne+ ions with energies ranging from 300–2000 eVPhysica, 1960
- Substrate Damage in Film Thickness Measurement by Beam InterferometryNature, 1959
- Errors in the Measurement of Film Thickness by Multiple-Beam InterferometryNature, 1958
- Theory of Sputtering by High-Speed IonsPhysical Review B, 1958
- Focusing in Collision Problems in SolidsJournal of Applied Physics, 1957
- Apparent Density of Thin Evaporated FilmsJournal of Applied Physics, 1954
- Multiple-Beam Fringes of Equal Chromatic Order* Part I Phase Change ConsiderationsJournal of the Optical Society of America, 1953
- The Effect of Phase Changes in White Light InterferometryJournal of the Optical Society of America, 1951
- The Thickness Measurement of Thin Films by Multiple Beam InterferometryJournal of Applied Physics, 1950