1.54 μm room-temperature electroluminescence of erbium-doped GaAs and GaAlAs grown by molecular beam epitaxy
- 13 November 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (20), 2105-2107
- https://doi.org/10.1063/1.102077
Abstract
GaAs and GaAlAs double-heterostructure light emitting diodes doped with erbium have been grown by molecular beam epitaxy. Both devices exhibit 1.54 μm electroluminescence (EL) at 300 K but the spectra obtained for GaAlAs:Er are much narrower than those of GaAs:Er. 1.54 μm EL has been detected for injection currents as low as 0.8 mA/cm2 and an external quantum efficiency of 10−6 has been found at 300 K. Preliminary data concerning the energy transfer from the injected carriers to the rare earth are provided.Keywords
This publication has 10 references indexed in Scilit:
- Oscillator strengths, quantum efficiencies, and laser cross sections of Yb3+ and Er3+ in III-V compoundsJournal of Applied Physics, 1989
- Localized center luminescence quenching by the auger effectJournal of Luminescence, 1988
- Photoluminescence decay of 1.54 μm Er3+ emission in Si and III-V semiconductorsElectronics Letters, 1988
- Intense and sharply structured 1.54μm room-temperature luminescence of Er-doped GaAs/AlGaAs structures grown by MBEElectronics Letters, 1988
- Erbium-doped GaAs light-emitting diode at 1.54 μmElectronics Letters, 1988
- Erbium-doped GaAs light-emitting diodes emitting erbium f-shell luminescence at 1.54 [micro sign]mElectronics Letters, 1988
- Note on unilateral power gain as applied to submicrometre transistorsElectronics Letters, 1988
- Single longitudinal mode operation of Er-doped 1.5-μm InGaAsP lasersApplied Physics Letters, 1987
- Erbium doping of molecular beam epitaxial GaAsApplied Physics Letters, 1987
- Observation of enhanced single longitudinal mode operation in 1.5-μm GaInAsP erbium-doped semiconductor injection lasersApplied Physics Letters, 1986