Electroluminescence and Lasing Action in GaAsxP1−x
- 1 March 1965
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 36 (3), 684-688
- https://doi.org/10.1063/1.1714202
Abstract
The electroluminescence of Zn diffused diodes was studied in forward and reverse bias. Emission spectra obtained for forward biasing showed a near‐edge as well as a low‐energy line. In the composition range x>0.55, where the lowest conduction band minimum is at k=0, most photons are emitted in the near‐edge line. Lasing action could be observed in this range, and the shortest wavelength where stimulated emission was obtained at 77°K was 6380 Å. For xxx=0.55 when x is decreased. The efficiency of the reverse bias emission is independent of composition.Keywords
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