Hole Transport and Trapping in Field Oxides

Abstract

The electric field, temperature, and oxide thickness dependencies of the transport of radiation-generated holes through thick (> 100 nm) SiO2 layers was measured using fast capacitance-voltage techniques. The transport is radically slowed with respect to that in thinner oxides under similar conditions and is well described by the continuous time random walk model. Significant hole trapping in the oxide bulk is also observed.