Charge and Interface State Generation in Field Oxides
- 1 January 1984
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 31 (6), 1273-1279
- https://doi.org/10.1109/tns.1984.4333495
Abstract
Radiation-induced charge and interface state generation are measured in MOS capacitors with steam oxide layers typical of standard field oxides and at low fields (<0.1 MV/cm) typical of device applications. Interface state buildup occurs primarily through a "prompt" process and most of the states are "slow". Free electron-hole pair yield at low fields is reduced from that previously measured in thinner (gate) oxides.Keywords
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