Absorption saturation and photodarkening in semiconductor-doped glasses
- 8 May 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (19), 1830-1832
- https://doi.org/10.1063/1.101249
Abstract
Transmission measurements show a large decrease of the absorption saturation in semiconductor-doped glasses which have been exposed to intense absorbing light. A simple saturation model including nonradiative and Auger recombination and an unsaturable part of the absorption, interpreted as free-carrier absorption, explains the observed changes.Keywords
This publication has 15 references indexed in Scilit:
- Laser annealing effect on carrier recombination time in CdSXSe_1–X-doped glassesJournal of the Optical Society of America B, 1988
- Nonlinear-optical effects in ion-exchanged semiconductor-doped glass waveguidesJournal of the Optical Society of America B, 1988
- Time-resolved direct observation of Auger recombination in semiconductor-doped glassesApplied Physics Letters, 1987
- Nonlinear optical properties of commercial semiconductor-doped glassesApplied Physics A, 1987
- Observation of optical bistability in CdSXSe_1−X-doped glasses with 25-psec switching timeOptics Letters, 1987
- Quantum confinement effects of semiconducting microcrystallites in glassJournal of Applied Physics, 1987
- New results on optical phase conjugation in semiconductor-doped glassesJournal of the Optical Society of America B, 1987
- Zero-dimensional "excitons" in semiconductor clustersIEEE Journal of Quantum Electronics, 1986
- Ultrafast carrier and grating lifetimes in semiconductor-doped glassesApplied Physics Letters, 1985
- Degenerate four-wave mixing in semiconductor-doped glassesJournal of the Optical Society of America, 1983