Stress in thermal SiO2 during growth
- 1 July 1979
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 35 (1), 8-10
- https://doi.org/10.1063/1.90905
Abstract
Stress present in thermal SiO2 at temperatures d u r i n g g r o w t h in wet O2 has been measured as a function of growth temperature. During growth at 950 °C and below, compressive stress on the order of 7×109 dyn/cm2 is generated in the SiO2. During growth at 975 and 1000 °C, the SiO2 grows in a stress‐free state. The results, which are consistent with a viscous flow point somewhere between 950 and 975 °C, are of value in avoiding mechanical failure effects in integrated‐circuit processing.Keywords
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