X-ray diffraction topographs of silicon crystals with superposed oxide film. II. Pendellösung fringes: comparison of experiment with theory

Abstract

The computational and theoretical procedures developed in the preceding paper are applied to the problem of x‐ray dynamical diffraction effects observed at the edges of a thin oxide film thermally grown on highly perfect silicon. The experimental observations have mainly been of the section type which reveal the fine details of the diffraction phenomena as extra hook‐shaped ``Pendellösung'' fringes in the silicon crystal. The observed position of the fringes and their phases agree reasonably well with theoretical calculations. Measurements have been made for a number of thicknesses of oxide film grown under different conditions. From the analysis it is possible to evaluate the stress in the film. The results indicate that for oxides grown at different temperatures and under different conditions, the stress in the film is constant. Possible implications of this result with regard to the thermal history of the oxide are discussed.