Electron capture in quantum wells via scattering by electrons, holes, and optical phonons

Electron-capture times due to the electron-electron (

e - e

), electron-hole (

e - h

), and electron-polar optical phonon (

e

-pop) interactions are calculated in the GaAs quantum well (QW) with electron and hole densities

10^{11}

{cm}^{- 2}

. The calculated capture times oscillate as a function of the QW width with the same period but with different amplitudes. The

e - h

capture time is two to four orders larger and the

e - e

capture time one to three orders larger than the

e

-pop capture time. The exceptions are the QW widths near resonance minima, where the

e - e

capture time is only 2-3 times larger and the

e - h

capture time 10-100 times larger. A different physical origin of the oscillatory behavior is demonstrated for the

e - e

and

e

-pop capture times. Effects of exchange and degeneracy on the

e - e

capture are analyzed. The exchange effect increases the

e - e

capture time approximately two times while the degeneracy does not change the capture time except for the QW depths and widths near the resonance.

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