High conversion efficiency and high radiation resistance InP homojunction solar cells
- 15 March 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (6), 611-613
- https://doi.org/10.1063/1.94851
Abstract
InP homojunction solar cells have been fabricated using thermal diffusion of sulphur or selenium into p-type InP substrates. A conversion efficiency of 16.5% (active area) was obtained for a S-diffused cell under simulated AM1.5 illumination. The InP solar cell was found for the first time to have a higher resistance to γ-ray radiation degradation than Si and GaAs solar cells with comparable junction depth. These results show a possibility of the InP solar cells for space applications.Keywords
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