Simplified fabrication of GaAs homojunction solar cells with increased conversion efficiencies

Abstract

Conversion efficiencies as high as 20% of AM1 have been obtained for single‐crystal GaAs shallow‐homojunction solar cells without Ga_1−xAl_xAs layers. These cells, which are fabricated by a simplified technique that does not require any vacuum processing steps, utilize an n⁺/p/p⁺ structure with an antireflection coating prepared by anodic oxidation of the n⁺ layer.