The effect of arsenic vapour species on electrical and optical properties of GaAs grown by molecular beam epitaxy
- 1 July 1982
- journal article
- research article
- Published by Springer Nature in Applied Physics A
- Vol. 28 (3), 167-173
- https://doi.org/10.1007/bf00617982
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- On the use of AsH3 in the molecular beam epitaxial growth of GaAsApplied Physics Letters, 1981
- Molecular Beam Epitaxy of GaAs and InP with Gas Sources for As and PJournal of the Electrochemical Society, 1980
- Fast digital apparatus for capacitance transient analysisReview of Scientific Instruments, 1980
- The effect of As2 and As4 molecular beam species on photoluminescence of molecular beam epitaxially grown GaAsApplied Physics Letters, 1980
- A correlation between electron traps and growth processes in n-GaAs prepared by molecular beam epitaxyApplied Physics Letters, 1980
- Interaction kinetics of As2 and Ga on {100} GaAs surfacesSurface Science, 1977
- Study of electron traps in n-GaAs grown by molecular beam epitaxyJournal of Applied Physics, 1976
- Interaction kinetics of As4 and Ga on {100} GaAs surfaces using a modulated molecular beam techniqueSurface Science, 1975
- The evaporation of GaAs under equilibrium and non-equilibrium conditions using a modulated beam techniqueJournal of Physics and Chemistry of Solids, 1973
- Surface structures and photoluminescence of molecular beam epitaxial films of GaAsSolid-State Electronics, 1971