High field conduction processes in silicon nitride films in the presence of charge trapping
- 15 July 1976
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 36 (1), 157-160
- https://doi.org/10.1016/0040-6090(76)90428-4
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Two-band conduction of amorphous silicon nitridePhysica Status Solidi (a), 1974
- Bias-Temperature-Stress Studies of Charge Retention in Dual-Dielectric, Charge-Storage CellsBell System Technical Journal, 1974
- Conduction in amorphous thin films of silicon nitride under non-uniform electric fieldsJournal of Physics D: Applied Physics, 1974
- Effects of bulk trapping on the memory characteristics of thick-oxide MNOS variable-threshold capacitorsSolid-State Electronics, 1974
- A Method for the Determination of High-Field Conduction Laws in Insulating Films in the Presence of Charge TrappingJournal of Applied Physics, 1972
- Hopping conduction in amorphous solidsPhilosophical Magazine, 1971
- On the hysteresis and memory properties of the silicon-silicon nitride systemSolid-State Electronics, 1971
- The Poole-Frenkel Effect with Compensation PresentJournal of Applied Physics, 1968
- Electrical Characteristics of Silicon Nitride Films Prepared by Silane‐Ammonia ReactionJournal of the Electrochemical Society, 1968
- Current Transport and Maximum Dielectric Strength of Silicon Nitride FilmsJournal of Applied Physics, 1967