Magnetoconductance and weak localization in silicon inversion layers
- 15 October 1981
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 24 (8), 4645-4651
- https://doi.org/10.1103/physrevb.24.4645
Abstract
Large magnetoconductivities are observed on high-mobility Si inversion layers in the temperature range of 4-1 K at very small magnetic fields. With the use of current localization theory the inelastic scattering rate has been extracted from the data as a function of both temperature and electron surface density. Inelastic lengths of about 8× cm at 1 K have been derived from the results. Band-structure effects are observed in the localization phenomena at very high electron surface densities.
Keywords
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