Current Transport Mechanism of Hydrogenated Amorphous Silicon Schottky Barrier Diodes
- 1 March 1981
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 20 (3), 593-596
- https://doi.org/10.1143/jjap.20.593
Abstract
We report detailed studies on the forward current-voltage characteristics of Pd/a-Si:H Schottky barrier diodes. Exact values of the barrier height and its temperature coefficient have been determined by the internal photoemission technique. Based upon this result, the current transport mechanism through the a-Si:H Schottky barrier has been quantitatively examined. The fundamental characteristics of the Schottky barrier are considered to be dominated by diffusion theory rather than by thermionic emission theory.Keywords
This publication has 10 references indexed in Scilit:
- Internal photoemission in hydrogenated amorphous-Si filmsApplied Physics Letters, 1980
- Electron drift mobility in hydrogenated a-SiApplied Physics Letters, 1980
- Amorphous silicon hydrogen alloys produced under magnetic fieldJournal of Non-Crystalline Solids, 1980
- Influence of preparation conditions on forward-bias currents of amorphous silicon Schottky diodesJournal of Applied Physics, 1979
- Electronic density of states in discharge-produced amorphous siliconApplied Physics Letters, 1979
- Schottky-barrier characteristics of metal–amorphous-silicon diodesApplied Physics Letters, 1976
- Amorphous silicon solar cellApplied Physics Letters, 1976
- Amorphous and Liquid SemiconductorsPublished by Springer Nature ,1974
- Review of the theory of amorphous semiconductorsJournal of Non-Crystalline Solids, 1970
- The Analysis of Photoelectric Sensitivity Curves for Clean Metals at Various TemperaturesPhysical Review B, 1931