Homogeneous solution grown epitaxial GaAs by tin doping
- 31 May 1969
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 12 (5), 337-340
- https://doi.org/10.1016/0038-1101(69)90088-4
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Arseniure de gallium de haute mobilite obtenu par epitaxie en phase liquideMaterials Research Bulletin, 1968
- PREPARATION AND PROPERTIES OF HIGH-PURITY EPITAXIAL GaAs GROWN FROM Ga SOLUTIONApplied Physics Letters, 1967
- Determination of Deep Centers in Conducting Gallium ArsenideJournal of Applied Physics, 1966
- The Gunn effect in polar semiconductorsIEEE Transactions on Electron Devices, 1966
- Solubility and Electrical Behavior of Group IV Impurities in Solution Grown Gallium PhosphideJournal of the Electrochemical Society, 1965
- Impurity Distribution in Epitaxial Silicon FilmsJournal of the Electrochemical Society, 1962