Photo-electronic properties of InAs0.07Sb0.93 films
- 1 February 1973
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 15 (2), 217-221
- https://doi.org/10.1016/0040-6090(73)90045-x
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- The thin film MIS surface photodiodeThin Solid Films, 1972
- Bulk-like InSb films by hot-wire zone crystallizationThin Solid Films, 1972
- Determination of Optical Energy Gaps from Surface Photovoltage MeasurementsJournal of Applied Physics, 1972
- Electronic and Optical Properties of InAsxSb1−x FilmsJournal of Vacuum Science and Technology, 1972
- Liquid Phase Epitaxial Growth of InAs[sub 1−x] Sb[sub x]Journal of the Electrochemical Society, 1971
- Electronic Structures of Semiconductor AlloysPhysical Review B, 1970
- Free-carrier Faraday rotation in InAsxSb1−x alloysCanadian Journal of Physics, 1968
- Electron scattering in InAsxSb1−x alloysCanadian Journal of Physics, 1968
- Band structure of indium antimonideJournal of Physics and Chemistry of Solids, 1957
- Anomalous Optical Absorption Limit in InSbPhysical Review B, 1954