Implantation doping of germanium with Sb, As, and P
- 1 February 1977
- journal article
- Published by Springer Nature in Applied Physics A
- Vol. 12 (2), 173-178
- https://doi.org/10.1007/bf00896143
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Determination of deep trap levels in silicon using ion-implantation and CV-measurementsApplied Physics A, 1974
- Ion-implanted Ge transistor: Basic experimentsPhysica Status Solidi (a), 1974
- Excess vacancy generation mechanism at phosphorus diffusion into siliconJournal of Applied Physics, 1974
- Controlled gold doping of silicon by using ion implantationApplied Physics A, 1974
- An automatic test set for measuring dopant concentration profiles in epitaxial filmsSolid-State Electronics, 1969