Effects of Acceptor Concentration Gradients in GaAs Junctions on the Energy of the Fluorescence Peak
- 1 November 1964
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 35 (11), 3419
- https://doi.org/10.1063/1.1713234
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- EFFECT OF DOPING ON FREQUENCY OF STIMULATED AND INCOHERENT EMISSION IN GaAs DIODESApplied Physics Letters, 1963
- RADIATIVE RECOMBINATION THROUGH IMPURITY LEVELS IN GaAs p-n JUNCTIONSApplied Physics Letters, 1963
- EFFECT OF DOPING ON THE EMISSION PEAK AND THE ABSORPTION EDGE OF GaAsApplied Physics Letters, 1963
- CorrespondenceProceedings of the IRE, 1962
- Impurity Band in Semiconductors with Small Effective MassPhysical Review B, 1955