An STM study of the Si(001)-(2*1) and GaAs(001)-(2*4) surfaces
- 1 July 1992
- journal article
- Published by IOP Publishing in Nanotechnology
- Vol. 3 (3), 113-122
- https://doi.org/10.1088/0957-4484/3/3/003
Abstract
The authors present some observations of Si(001)-(2*1) and GaAs(001)-(2*4) surfaces. They show what is seen when the surface is exposed to ethyne and to ethene and provide a foundation for investigating adsorbates on semiconductor surfaces.Keywords
This publication has 19 references indexed in Scilit:
- Adsorption and thermal behavior of ethylene on Si(100)-(2 × 1)Surface Science, 1992
- Adsorption and decomposition of acetylene on silicon(100)-(2.times.1)Journal of the American Chemical Society, 1992
- Surface migration of ‘‘hot’’ adatoms in the course of dissociative chemisorption of oxygen on Al(111)Physical Review Letters, 1992
- Self-consistent study of the electronic and structural properties of the clean Si(001)(2 × 1) surfaceApplied Surface Science, 1992
- Determination of the local electronic structure of atomic-sized defects on Si(001) by tunneling spectroscopyJournal of Vacuum Science & Technology A, 1989
- Electronic and geometric structure of Si(111)-(7 × 7) and Si(001) surfacesSurface Science, 1987
- Scanning tunneling microscopy of Si(001)Physical Review B, 1986
- Surface Electronic Structure of Si (111)-(7×7) Resolved in Real SpacePhysical Review Letters, 1986
- Theoretical study of the atomic structure of silicon (211), (311), and (331) surfacesPhysical Review B, 1984
- Atomic and Electronic Structures of Reconstructed Si(100) SurfacesPhysical Review Letters, 1979