Insulator-GaN interface structures formed by plasma-assisted chemical vapor deposition
- 1 May 2000
- journal article
- Published by Elsevier in Physica E: Low-dimensional Systems and Nanostructures
- Vol. 7 (3-4), 953-957
- https://doi.org/10.1016/s1386-9477(00)00095-3
Abstract
No abstract availableKeywords
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