A review of bulk unipolar diodes and their applications
- 31 August 1982
- journal article
- review article
- Published by Elsevier in Microelectronics Journal
- Vol. 13 (4), 19-22
- https://doi.org/10.1016/s0026-2692(82)80004-9
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Charge injection over triangular barriers in unipolar semiconductor structuresApplied Physics Letters, 1981
- Novel device structures by molecular beam epitaxyJournal of Vacuum Science and Technology, 1981
- Fabrication and numerical simulation of the permeable base transistorIEEE Transactions on Electron Devices, 1980
- New rectifying semiconductor structure by molecular beam epitaxyApplied Physics Letters, 1980
- Complex free-carrier profile synthesis by ’’atomic-plane’’ doping of MBE GaAsJournal of Applied Physics, 1980
- Planar-doped barriers in GaAs by molecular beam epitaxyElectronics Letters, 1980
- Photo-f.e.t. method: high-resolution deep-level measurement technique using a m.e.s.f.e.t. structureElectronics Letters, 1980
- A majority-carrier camel diodeApplied Physics Letters, 1979
- Increasing the effective height of a Schottky barrier using low-energy ion implantationApplied Physics Letters, 1974
- Field-effects in polycrystalline-silicon filmsSolid-State Electronics, 1972