High density fluorocarbon plasma etching of new resists suitable for nano-imprint lithography
- 30 June 2000
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 53 (1-4), 501-505
- https://doi.org/10.1016/s0167-9317(00)00365-8
Abstract
No abstract availableKeywords
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- Imprint of sub-25 nm vias and trenches in polymersApplied Physics Letters, 1995
- Fluorocarbon high-density plasmas. II. Silicon dioxide and silicon etching using CF4 and CHF3Journal of Vacuum Science & Technology A, 1994