High power single mode InGaAsP lasers fabricated by single step liquid phase epitaxy
- 15 January 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 42 (2), 139-141
- https://doi.org/10.1063/1.93872
Abstract
Lasing properties of an InGaAsP (λ=1.3 μm) crescent-shaped buried heterostructure laser are presented. The structure was grown by single step liquid phase epitaxy on a mesa substrate. High output power in pulsed operation (150 mW/facet) and high external differential quantum efficiency (60%) are realized in this structure even though there is no special layer for current blocking. Fundamental mode operation up to a power level of 30 mW/facet is found. These characteristics are attributed to the effect of the mesa on current flow and they demonstrate the importance of substrate topography on laser performance.Keywords
This publication has 13 references indexed in Scilit:
- V-grooved substrate buried heterostructure InGaAsP/InP laser by one-step epitaxyJournal of Applied Physics, 1982
- Output power saturation of BH laser under high current operationElectronics Letters, 1982
- Constricted double-heterojunction AlGaAs diode lasers: Structures and electrooptical characteristicsIEEE Journal of Quantum Electronics, 1981
- Transverse mode stabilized InGaAsP/InP (λ = 1.3 µm) piano-convex waveguide lasersIEEE Journal of Quantum Electronics, 1981
- Bidirectional fibre optic loop-structured networkElectronics Letters, 1981
- High power output InGaAsP/InP buried heterostructure lasersElectronics Letters, 1981
- Transverse mode control in InGaAsP/InP buried crescent diode lasersElectronics Letters, 1981
- Low threshold channelled-substrate buried crescent InGaAsP lasers emitting at 1.54 μmElectronics Letters, 1981
- Single Transverse Mode Operation of Terraced Substrate GaInAsP/InP Lasers at 1.3 µm WavelengthJapanese Journal of Applied Physics, 1980
- Fabrication and characterization of narrow stripe InGaAsP/InP buried heterostructure lasersJournal of Applied Physics, 1980