Luminescence in plasma-deposited Si–O alloys

Abstract

Luminescence properties of hydrogenated amorphous Si–O alloys made by plasma decomposition are described. Alloying with oxygen results in a systematic increase of the luminescence peak position and linewidth, a reduction in the thermal quenching, and a modification of the decay properties. From the data we infer an increase in the width of the band tails, and a larger electron–phonon interaction compared with a-Si: H.