Film thickness measurements of SiO2 by XPS
- 1 January 1994
- journal article
- research article
- Published by Wiley in Surface and Interface Analysis
- Vol. 21 (1), 44-50
- https://doi.org/10.1002/sia.740210107
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- An Electron Spectroscopic Investigation of Attenuation Lengths of Electrons in SiO2 in the Energy Range 450 eV ≤ Ekin ≤ 3100 eVSurface and Interface Analysis, 1992
- Determination of Si2p electron attenuation lengths in SiO2Journal of Electron Spectroscopy and Related Phenomena, 1992
- Thickness determination of thin SiO2 on siliconSolid-State Electronics, 1992
- Calculations of electron inelastic mean free paths. III. Data for 15 inorganic compounds over the 50–2000 eV rangeSurface and Interface Analysis, 1991
- Measurements and Modeling of Thin Silicon Dioxide Films on SiliconJournal of the Electrochemical Society, 1990
- A reassessment of electron escape depths in silicon and thermally grown silicon dioxide thin filmsSurface Science, 1988
- X-Ray Photoelectron Spectroscopy of SiO2-Si Interfacial Regions: Ultrathin Oxide FilmsIBM Journal of Research and Development, 1978
- Properties of oxidized silicon as determined by angular-dependent X-ray photoelectron spectroscopyChemical Physics Letters, 1976
- Electron mean escape depths from x−ray photoelectron spectra of thermally oxidized silicon dioxide films on siliconJournal of Vacuum Science and Technology, 1975
- High-Resolution X-Ray Photoemission Spectrum of the Valence Bands of GoldPhysical Review B, 1972