Modeling statistical dopant fluctuations in MOS transistors
- 1 January 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 45 (9), 1960-1971
- https://doi.org/10.1109/16.711362
Abstract
No abstract availableThis publication has 24 references indexed in Scilit:
- Random MOSFET parameter fluctuation limits to gigascale integration (GSI)Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Channel engineering for the reduction of random-dopant-placement-induced threshold voltage fluctuationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Influence of Statistical Spatial-Nonuniformity of Dopant Atoms on Threshold Voltage in a System of Many MOSFETsJapanese Journal of Applied Physics, 1996
- A Powerful TCAD System Including Advanced RSM Techniques for Various Engineering Optimization ProblemsPublished by Springer Nature ,1993
- Effects of microscopic fluctuations in dopant distributions on MOSFET threshold voltageIEEE Transactions on Electron Devices, 1992
- The evolution of the MINIMOS mobility modelSolid-State Electronics, 1990
- Atomic layer doped field-effect transistor fabricated using Si molecular beam epitaxyApplied Physics Letters, 1989
- MOS device modeling at 77 KIEEE Transactions on Electron Devices, 1989
- A physically based mobility model for numerical simulation of nonplanar devicesIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1988
- A New Short Channel MOSFET with an Atomic-Layer-Doped Impurity-Profile (ALD-MOSFET)Japanese Journal of Applied Physics, 1983