Complementary HBT push-pull amplifier by selective MBE
- 1 April 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Guided Wave Letters
- Vol. 2 (4), 149-150
- https://doi.org/10.1109/75.129444
Abstract
Microwave performance results are presented of the first monolithically integrated GaAs-AlGaAs complementary HBT push-pull amplifier fabricated using selective molecular beam epitaxy and a merged HBT process. The push-pull amplifier integrates four n-p-n transistors with one p-n-p transistor on the same GaAs chip. The amplifier has a sharp DC characteristic curve with no crossover offset, a voltage swing of 6.3 V using a 9-V supply, and a linear voltage gain of 20. The bandwidth is DC to 2.5 GHz, with a saturated output power of 7.4 dBm at 2.5 GHz.Keywords
This publication has 5 references indexed in Scilit:
- Effect of exponentially graded base doping on the performance of GaAs/AlGaAs heterojunction bipolar transistorsIEEE Electron Device Letters, 1991
- Integrated npn/pnp GaAs/AlGaAs HBTs grown by selective MBEElectronics Letters, 1991
- AlGaAs/GaAs P-n-p HBTs with high maximum frequency of oscillationIEEE Electron Device Letters, 1990
- Monolithic integration of complementary HBTs by selective MOVPEIEEE Electron Device Letters, 1990
- Optimizing N-p-n and P-n-p heterojunction bipolar transistors for speedIEEE Transactions on Electron Devices, 1987