Hole injection into silicon nitride: Interface barrier energies by internal photoemission
- 15 June 1975
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 26 (12), 711-713
- https://doi.org/10.1063/1.88046
Abstract
Energy barrier heights at the interfaces of metal–silicon nitride–silicon structures have been measured by internal photoemission as a function of metal electrode material and substrate doping. These measurements have been interpreted in terms of a dominant hole internal photoemission mechanism. Hole energy barriers from the Au, Al, or Mg Fermi level and the Si valence band to the Si3N4 valence band were found to be 1.9±0.1, 3.0±0.1, 4.0±0.1, and 2.1±0.1 eV, respectively.Keywords
This publication has 16 references indexed in Scilit:
- Effects on interface barrier energies of metal-aluminum oxide-semiconductor (MAS) structures as a function of metal electrode material, charge trapping, and annealingJournal of Applied Physics, 1974
- Optical Properties of Silicon NitrideJournal of the Electrochemical Society, 1973
- Photoinjection into SiO2: Use of Optical Interference to Determine Electron and Hole ContributionsJournal of Applied Physics, 1969
- PHOTOEMISSION OF ELECTRONS AND HOLES INTO SILICON NITRIDEApplied Physics Letters, 1968
- Preparation and Properties of Pyrolytic Silicon NitrideJournal of the Electrochemical Society, 1966
- Photoemissive Determination of Barrier Shape in Tunnel JunctionsPhysical Review Letters, 1965
- Optical Constants of Silicon in the Region 1 to 10 evPhysical Review B, 1960
- Intrinsic Optical Absorption in Single-Crystal Germanium and Silicon at 77°K and 300°KPhysical Review B, 1955
- Optical Constants of Silver, Gold, Copper, and Aluminum II The Index of Refraction nJournal of the Optical Society of America, 1954
- The Analysis of Photoelectric Sensitivity Curves for Clean Metals at Various TemperaturesPhysical Review B, 1931