Relative intensity noise of vertical cavity surface emitting lasers
- 15 March 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (11), 1194-1196
- https://doi.org/10.1063/1.108731
Abstract
A study of the relative intensity noise (RIN) of two all semiconductor vertical cavity surface emitting lasers is presented. We find that the slope of the low frequency RIN agrees with theory for the fundamental mode only and that transverse modes introduce sharp changes in the RIN and put a limit on the minimum attainable RIN. For the fundamental mode, both devices achieve a RIN of less than −140 dB/Hz for optical powers less than 1 mW. This good performance is attributed to the high reflectivity of the cavity mirrors.Keywords
This publication has 5 references indexed in Scilit:
- Ultrafast (up to 39 GHz) relaxation oscillation of vertical cavity surface emitting laserApplied Physics Letters, 1992
- Vertical-cavity surface-emitting laser diodes fabricated by phase-locked epitaxyApplied Physics Letters, 1991
- Intensity noise and polarization stability of GaAlAs-GaAs surface emitting lasersIEEE Journal of Quantum Electronics, 1991
- Explanation of low-frequency relative intensity noise in semiconductor lasersApplied Physics Letters, 1990
- AM and FM quantum noise in semiconductor lasers - Part I: Theoretical analysisIEEE Journal of Quantum Electronics, 1983