High-mobility poly-Si thin-film transistors fabricated by a novel excimer laser crystallization method
- 1 January 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 40 (1), 112-117
- https://doi.org/10.1109/16.249432
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
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