Amorphous-silicon/silicon-nitride thin-film transistors fabricated by plasma-free (chemical vapor deposition) method
- 1 June 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 11 (6), 258-260
- https://doi.org/10.1109/55.55273
Abstract
The application of chemical-vapor-deposited (CVD) amorphous-silicon and silicon-nitride films to active layers of thin-film transistors on a glass substrate is discussed. The maximum process temperature was 485 degrees C. The maximum field-effect mobility and the typical on-off current ratio were more than 0.9 cm/sup 2//V-s and 10/sup 6/, respectively. Advantages of applying the fully plasma-free CVD method in the amorphous-silicon thin-film transistor process are discussed.<>Keywords
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- a-Si:H TFTs using low-temperature CVD of Si3H8Electronics Letters, 1989