Formation of Injecting and Blocking Contacts on High-Resistivity Germanium
- 15 April 1972
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 20 (8), 323-325
- https://doi.org/10.1063/1.1654169
Abstract
The behavior of Al and Sb/Ge/Sb layers evaporated on high‐purity Ge and heat treated at 280 °C is studied by reverse‐recovery, double‐injection, and nuclear‐particle‐response techniques. The results indicate that the contacts have the injection and blocking characteristics of p‐ and n‐type material, respectively. Backscattering measurements with 1.8‐MeV 4He+ ions show that solid‐solid reactions occur.Keywords
This publication has 7 references indexed in Scilit:
- Solid-Phase Growth of Ge from Evaporated Al LayerApplied Physics Letters, 1972
- Alloying Behavior of Au and Au–Ge on GaAsJournal of Applied Physics, 1971
- LOW-TEMPERATURE MIGRATION OF SILICON IN THIN LAYERS OF GOLD AND PLATINUMApplied Physics Letters, 1971
- Drift velocity of electrons and holes and associated anisotropic effects in siliconJournal of Physics and Chemistry of Solids, 1971
- High Purity Germanium for Detector FabricationIEEE Transactions on Nuclear Science, 1971
- Gamma Ray Detectors Made from High Purity GermaniumIEEE Transactions on Nuclear Science, 1970
- Effect of Deposited Metals on the Crystallization Temperature of Amorphous Germanium FilmJapanese Journal of Applied Physics, 1969