Solid-Phase Growth of Ge from Evaporated Al Layer

Abstract

Solid Al was used as a medium from which to grow Ge onto a substrate of crystalline Ge. Evidence for growth was obtained from MeV He⁺ backscattering, which showed both Ge dissolution and growth can occur at the Ge/Al interface. Backscattering experiments also indicated transport from evaporated Ge through the Al medium to a crystalline Ge substrate. Diodes formed by temperature cycling a structure of n‐type Ge/Al showed hole injection into the substrate during reverse‐recovery‐time measurements, confirming the expectation that Ge growth is present and is heavily p type from incorporation of the Al solvent during growth.