High mobility AlGaN/GaN heterostructures grown by gas-source molecular beam epitaxy
- 1 May 1998
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 16 (3), 1275-1277
- https://doi.org/10.1116/1.590087
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
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