Calculation of the conduction band discontinuity for Ga0.47In0.53As/Al0.48In0.52As heterojunction
- 15 April 1984
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 55 (8), 3176-3179
- https://doi.org/10.1063/1.333348
Abstract
Photoluminescence studies at 4 K on Ga0.47In0.53As/ Al0.48In0.52As single quantum wells exhibit emission ranging from 1.318 eV for a 15‐Å well to 0.82 eV for thick wells. The emission energy of each single quantum well is compared to theoretical curves which are generated from a finite potential square well model. The closest agreement between the experimental curves and the theoretical curves occurs when the conduction band discontinuity is taken to be 70% of the band‐gap discontinuity or 0.52 eV.Keywords
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