Relaxation of strained InGaAs during molecular beam epitaxy
- 9 July 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (2), 144-146
- https://doi.org/10.1063/1.103966
Abstract
Relaxation of strained InxGa1−xAs films grown on GaAs substrates has been measured in situ during molecular beam epitaxy growth by reflection high‐energy electron diffraction (RHEED). Growth is found to be layer by layer up to a strain‐dependent ‘‘critical’’ thickness where three‐dimensional clusters with {114} facets form. The onset of cluster growth is simultaneous with lattice relaxation as measured by RHEED. The relaxation during growth is compared with the Dodson–Tsao model for strained‐layer relaxation [Appl. Phys. Lett. 53, 1325 (1987)]. Two distinct mechanisms for relaxation were found depending on film strain. An activation energy for relaxation was measured to be 4.4 eV for a film strain of 2.3%. The relaxation deviated from the Dodson–Tsao model for nongrowth conditions.Keywords
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