Evidence for reaction at the Al-SiO2interface
- 14 March 1981
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 14 (3), L17-L22
- https://doi.org/10.1088/0022-3727/14/3/001
Abstract
Evidence from X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) is presented for a solid state reaction between aluminium and oxidised silicon, which results in the formation of a crystalline oxide phase of aluminium and elemental silicon. The oxide phase has been identified as a mixture of eta and gamma phases which are less dense and have more 'open' structures than the most stable alpha -Al2O3 phase. The authors suggest that this reaction which can occur under the conditions used for the manufacture of integrated circuits may be significant for electromigration failure mechanisms.Keywords
This publication has 9 references indexed in Scilit:
- Dipole layers at the metal-SiO2 interfaceJournal of Applied Physics, 1980
- Linewidth dependence of electromigration in evaporated Al-0.5%CuApplied Physics Letters, 1980
- Surface reactions and interdiffusionJournal of Vacuum Science and Technology, 1979
- Observations of Al2O3 and free silicon at the interface between aluminum films and SiO2Thin Solid Films, 1978
- The Reaction Between Silica and AluminumJournal of the Electrochemical Society, 1974
- A simple rotating jet-thinning apparatus for producing taper sections and electron microscope specimens from silicon and compound semiconductorsJournal of Physics D: Applied Physics, 1973
- A large area substrate heater for ultra high vacuumVacuum, 1973
- Void Formation and Growth During Electromigration in Thin FilmsJournal of Applied Physics, 1971
- RESISTANCE MONITORING AND EFFECTS OF NONADHESION DURING ELECTROMIGRATION IN ALUMINUM FILMSApplied Physics Letters, 1968