Electro−optic intensity modulation in LiTaO3 ridge waveguide

Abstract
A narrow rectangular ridge for 24 μm (width of the top) ×6 μm (height) ×5.4 mm (length) has been formed on Cu−diffused x−plate LiTaO3 using the sputter−etching technique. The intensity modulation of the optical wave confined in the ridge has been made up to 1 GHz with a half−wave voltage of 25−30 V at 6328 Å.