Effect of Silicon Doping Profile on I–V Characteristics of an AlGaAs/GaAs Resonant Tunneling Barrier Structure Grown by MBE
- 1 July 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (7A), L577
- https://doi.org/10.1143/jjap.25.l577
Abstract
The effect of Si doping profile on I–V characteristics of an AlGaAs/GaAs resonant tunneling barrier (RTB) structure was studied by changing the thickness of an undoped GaAs “spacer” layer placed adjacent to the RTB. We found that the peak and the valley current density in the negative differential resistance region at 77 K depends strongly on the thickness of the spacer layer. By using a spacer layer of 50 Å, we achieved a resonant tunneling diode with the highest peak current density of 2×104 A/cm2 with a good peak-to-valley ratio of 3.5 at 77 K.Keywords
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