Characterization of InP/GaInAs/InP heterostructures grown by organometallic vapor phase epitaxy for high-speed p-i-n photodiodes
- 1 September 1986
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 77 (1-3), 558-563
- https://doi.org/10.1016/0022-0248(86)90352-0
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- InGaAs photodiodes prepared by low-pressure MOCVDElectronics Letters, 1985
- Organometallic vapor phase epitaxial growth and characterization of high purity GaInAs on InPApplied Physics Letters, 1985
- InGaAs PIN photodetectors with modulation response to millimetre wavelengthsElectronics Letters, 1985
- Improved very-high-speed packaged InGaAs PIN punch-through photodiodeElectronics Letters, 1985
- Low dark current InGaAs PIN photodiodes grown by molecular beam epitaxyElectronics Letters, 1985
- GaInAs PIN photodiodes grown by atmospheric-pressure MOVPEElectronics Letters, 1985
- Large-area and visible response VPE InGaAs photodiodesIEEE Transactions on Electron Devices, 1983
- GaInAs/InP large bandwidth (> 2 GHz) PIN detectorsElectronics Letters, 1983
- Optical response time of In0.53Ga0.47As/InP avalanche photodiodesApplied Physics Letters, 1982
- Vapour phase hetero-epitaxy: Growth of GaInAs layersJournal of Crystal Growth, 1982