Electronic structure of NiO
- 15 May 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 33 (10), 7267-7269
- https://doi.org/10.1103/physrevb.33.7267
Abstract
A comparison of photoemission and inverse photoemission results on NiO and NiS shows that the optical gap in NiO can consistently be interpreted as a p→d transition.Keywords
This publication has 11 references indexed in Scilit:
- Electronic Structure of NiOPhysical Review Letters, 1985
- Williams, Kübler, and Terakura RespondPhysical Review Letters, 1985
- Magnitude and Origin of the Band Gap in NiOPhysical Review Letters, 1984
- Photoemission and inverse photoemission spectroscopy of NiOSolid State Communications, 1984
- Band theory of insulating transition-metal monoxides: Band-structure calculationsPhysical Review B, 1984
- Valence-band photoemission and optical absorption in nickel compoundsPhysical Review B, 1984
- On the interpretation of valence band photoemission spectra of NiOSolid State Communications, 1984
- Electronic structure of Mott insulatorsAdvances in Physics, 1977
- Electrical and Optical Properties of Narrow-Band MaterialsPhysical Review B, 1970
- Point defects and phase stability of transition metal compoundsJournal of Physics and Chemistry of Solids, 1968